I. Introduction
Recent advancement in power semiconductors technology has seen insulated gate bipolar transistors (IGBT) and integrated gate commutated thyristors (IGCT) rapidly replace gate turn-off thyristors (GTO) in high-power applications [1]–[3]. IGBTs and GCTs presently have a voltage blocking capability of up to 6 kV, with saturation voltages ranging between 3 and 4.5 V and 2 and 3 V, respectively. Thus, they can switch at frequencies up to 1 kHz, enabling their usage in high power medium-voltage adjustable speed drives (ASD) in numerous industrial processes [4].