Heavy-Ion SEE Test Concept and Results for DDR-II Memories

In order to investigate heavy ion single event effects (SEEs) in advanced commercial DDR-II SDRAM memories, a large number of practical problems need to be addressed ranging from test approach, sample preparation, error analysis, physical error identifications and effective LET corrections before test results can be presented. This paper continues where Harboe-SØrensen , 2003, ended with further details on most of the critical steps mentioned above. Additionally, the first set of SEE data will be presented and discussed covering Samsung, Infineon, Micron, and Elpida 512 M-bit DDR-II memory devices.

I. Introduction

Today, the memory market has changed from Synchronous Dynamic Random Access Memories (SDRAMs) to Synchronous high-speed Double Data Rate (DDR) with transfer rates of up to 800 Mb/sec/pin (DDR-II). Many solid state recorders on board satellite systems use SDRAMs as their memory element. However, obsolescence of this family necessitates searching for alternative memory types. Here, candidate memory types are DDR/DDR-II/DDR-III and FLASH devices subject to acceptable total ionizing dose (TID) and SEE radiation performances [2].