Abstract:
A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout su...Show MoreMetadata
Abstract:
A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed.
Published in: IEEE Transactions on Nuclear Science ( Volume: 34, Issue: 6, December 1987)
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