I. INTRODUCTION
The paper presents a study of electrical contact surfaces under low force conditions, typically below lmN. Such condition are relevant to micro-contact applications, for example MEMS relay devices. There are a number of potential materials for such applications and Gold, Palladium or Platinum are commonly used [1]. The disadvantage of such materials are that they are relatively soft and easily wear. Other materials which are of interest for MEMS devices are silicon carbide and diamond. Both have high moduli but a low electrical conductivity. This makes them unsuitable for electrical contact applications. When SiC film is doped with the resistivity drops to [2] and DLC is doped with ruthenium the resistivity drops to [3] but both materials have higher resistivity compared to gold and its alloys (for example Au-6.3% Pt has a resistivity of [1].