High-Speed AlGaInAs-MQW Integrated EA Modulator/DFB Laser Module Based on Identical Epitaxial Layer Scheme for 40 Gb/s Optic Fiber Communication Systems

AlGalnAs MQW-DFB laser is monolithically integrated with a lumped-electrode electroabsorption modulator based on an identical epitaxial layer integration scheme. A 3 dBe modulation bandwidth of module over 33 GHz has been demonstrated.

I. Introduction

High-speed distributed feedback (DFB) laser integrated electroabsorption (EA) modulators [1] are key components for the next generation 40 Gb/s optical communication systems due to their compactness, low driving-voltage and high stability. So far, apart from some early reports on integrated devices adopting InGaAs/InAlAs MQWs as the electroabsorption layer [2], [3], most of the reported integrated light sources are based on InGaAsP multiple quantum wells (MQWs).