Contents I. Importance of Modeling Hot-Electron Injection for Above-Threshold Currents
Over the last decade, the number of applications of programmable floating-gate circuits has grown exponentially, powered primarily because of the ability to precisely program arrays of floating-gate devices (e.g. [1]). These advances have always followed modeling developments of the programming mechanisms for floating-gate circuits. The modeling of hot-electron injection, in particular, has led to highly effective programming for arrays of devices. The first model of hot-electron injection from first-principles physics for nFETs was in 1997, and for pFETs in 2001/2003 [2]. These modeling efforts focused on MOSFETs operating with subthreshold currents, where the high-field region is independent of the current gating mechanisms.
