New Electro-Thermal Integrated Circuit Modeling using Coupling of Simulators | IEEE Conference Publication | IEEE Xplore

New Electro-Thermal Integrated Circuit Modeling using Coupling of Simulators


Abstract:

This paper describes a methodology developed to perform electro-thermal analysis of integrated circuits. This method is based on the relaxation approach. A circuit simula...Show More

Abstract:

This paper describes a methodology developed to perform electro-thermal analysis of integrated circuits. This method is based on the relaxation approach. A circuit simulator and a thermal simulator which is a finite element program are coupled by an interface program. This method is applied to perform electro-thermal analysis of Si bipolar junction transistor (BJT) to predict the temperature distribution and the device performance in a circuit. Thermal non-linearity due to temperature-dependent material parameters in the context of thermal modeling of device and circuit has been considered. The simulation results indicate a temperature increase of device when biased in a moderate operating point. The junction temperature was about 107.2 degC at a power dissipation of 4.5 W
Date of Conference: 07-10 May 2006
Date Added to IEEE Xplore: 15 January 2007
CD:1-4244-0038-4
Print ISSN: 0840-7789
Conference Location: Ottawa, ON, Canada

1. Introduction

As the design of high performance VLSI becomes more complex and integrated, the number of components and clock frequency increase and the chip size decreases accordingly [1]. With the higher complexity in a chip, the power dissipation and consequently the temperature are higher. Temperature can have a dramatic impact on circuit performance, power consumption and reliability. Even though development of CAD tools has been significant in recent years, the lack of a reliable electro-thermal simulator is noticeable.

References

References is not available for this document.