High-reliability InGaP/GaAs HBTs fabricated by self-aligned process

We report the achievement of high-reliability self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT's) with an activation energy of 2.0 eV and a time to failure of 10/sup 6/ hours at a junction temperature of 200/spl deg/C. The reliability level is comparable to other devices in practical use. We also show a possible degradation mechanism of AlGaAs/GaAs HBTs.<
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