Abstract:
We report the achievement of high-reliability self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT's) with an activation energy of 2.0 eV and a time to failure...Show MoreMetadata
Abstract:
We report the achievement of high-reliability self-aligned InGaP/GaAs heterojunction bipolar transistors (HBT's) with an activation energy of 2.0 eV and a time to failure of 10/sup 6/ hours at a junction temperature of 200/spl deg/C. The reliability level is comparable to other devices in practical use. We also show a possible degradation mechanism of AlGaAs/GaAs HBTs.<>
Date of Conference: 11-14 December 1994
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-2111-1
Print ISSN: 0163-1918
