Abstract:
InGaAs-InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output freque...Show MoreMetadata
Abstract:
InGaAs-InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs-AlGaAs materials system.<>
Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 43, Issue: 3, March 1995)
DOI: 10.1109/22.372117
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Cites in Papers - IEEE (14)
Select All
1.
Liu-lin Hu, Li-ning Jia, Qian Lin, Peng-fei Zhao, Ying Liu, Hai-feng Wu, Feng Feng, Shuxia Yan, Xiao-hong Tang, "A Ku-Band Dual-Channel T/R MMIC Based on a 0.18-μm GaAs E/D pHEMT Technology", 2023 IEEE MTT-S International Wireless Symposium (IWS), pp.1-4, 2023.
2.
Jan Stake, Aleksandra Malko, Tomas Bryllert, Josip Vukusic, "Status and Prospects of High-Power Heterostructure Barrier Varactor Frequency Multipliers", Proceedings of the IEEE, vol.105, no.6, pp.1008-1019, 2017.
3.
Aleksandra Malko, Tomas Bryllert, Josip Vukusic, Jan Stake, "A 474 GHz HBV Frequency Quintupler Integrated on a 20 \mu{\hbox{m}} Thick Silicon Substrate", IEEE Transactions on Terahertz Science and Technology, vol.5, no.1, pp.85-91, 2015.
4.
J. Martens, "Multiband mm-wave transceiver analysis and modeling", WAMICON 2012 IEEE Wireless & Microwave Technology Conference, pp.1-4, 2012.
5.
Tomas Bryllert, Aleksandra Malko, Josip Vukusic, Jan Stake, "A 175 GHz HBV Frequency Quintupler With 60 mW Output Power", IEEE Microwave and Wireless Components Letters, vol.22, no.2, pp.76-78, 2012.
6.
Ai. Olsen, M. Ingvarson, B. Alderman, J. Stake, "A 100-GHz HBV frequency quintupler using microstrip elements", IEEE Microwave and Wireless Components Letters, vol.14, no.10, pp.493-495, 2004.
7.
Qun Xiao, Yiwei Duan, J.L. Hesler, T.W. Crowe, R.M. Weikle, "A 5 mW and 5% efficiency 210 GHz InP-based heterostructure barrier varactor quintupler", IEEE Microwave and Wireless Components Letters, vol.14, no.4, pp.159-161, 2004.
8.
Yongshik Lee, J.R. East, L.P.B. Katehi, "High-efficiency W-band GaAs monolithic frequency multipliers", IEEE Transactions on Microwave Theory and Techniques, vol.52, no.2, pp.529-535, 2004.
9.
X. Melique, A. Maestrini, R. Farre, P. Mounaix, M. Favreau, O. Vanbesien, J.-M. Goutoule, F. Mollot, G. Beaudin, T. Narhi, D. Lippens, "Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler", IEEE Transactions on Microwave Theory and Techniques, vol.48, no.6, pp.1000-1006, 2000.
10.
L. Dillner, S. Hollung, M. Ingvarson, E. Kollberg, J. Stake, W. Strupinski, A. Jelenski, C. Mann, "High efficiency HBV multipliers for millimeter wave generation", 13th International Conference on Microwaves, Radar and Wireless Communications. MIKON - 2000. Conference Proceedings (IEEE Cat. No.00EX428), vol.3, pp.47-54 vol.3, 2000.
11.
S. Hollung, J. Stake, L. Dillner, M. Ingvarson, E. Kollberg, "A distributed heterostructure barrier varactor frequency tripler", IEEE Microwave and Guided Wave Letters, vol.10, no.1, pp.24-26, 2000.
12.
Ming Li, K. Krishnamurthi, R.G. Harrison, "A fully distributed heterostructure-barrier varactor nonlinear transmission-line frequency multiplier and pulse sharpener", IEEE Transactions on Microwave Theory and Techniques, vol.46, no.12, pp.2295-2301, 1998.
13.
R. Havart, E. Lheurette, O. Vanbesien, P. Mounaix, F. Mollot, D. Lippens, "Step-like heterostructure barrier varactor", IEEE Transactions on Electron Devices, vol.45, no.11, pp.2291-2297, 1998.
14.
Antti V. Raisanen, "Recent Advances in the Studies of Frequncy Multipers at Millimeter and Submillimeter Wavelengths", 1994 24th European Microwave Conference, vol.1, pp.133-143, 1994.
Cites in Papers - Other Publishers (8)
1.
Ce-Tian Wang, Hai-Feng Wu, Wei Tong, Yu-Nan Hua, Yi-Jun Chen, Liu-Lin Hu, Ji-Ping Lv, Qian Lin, "A millimetre-wave GaAs monolithic multifunctional quadrupler chip with high harmonic rejection and high output power flatness", International Journal of Electronics Letters, vol.10, no.2, pp.209, 2022.
2.
A. Reklaitis, "Efficient heterostructure doped-barrier varactor diodes", Journal of Applied Physics, vol.105, no.2, pp.024502, 2009.
3.
L. Dillner, M. Ingvarson, E. Kollberg, J. Stake, Terahertz Sources and Systems, pp.27, 2001.
4.
D. Lippens, X. Melique, S. Arscott, T. David, V. Duez, J. Carbonell, P. Mounaix, O. Vanbesien, F. Mollot, "High Performance Heterostructure Barrier Varactors", Terahertz Sources and Systems, pp.53, 2001.
5.
Irina V. Ryjenkova, Vladimir K. Mezentsev, Sam L. Musher, Sergei K. Turitsyn, Ralf HüLsewede, Dieter JäGER, "Millimeter wave generation on nonlinear transmission lines", Annales Des Télécommunications, vol.52, no.3-4, pp.134, 1997.
6.
E. L. Kollberg, "Heterostructure Varactor Diodes for Microwave and Millimetre Wave Power Generation", Microwave Physics and Techniques, pp.3, 1997.
7.
"Heterostructure barrier varactors at submillimetre waves", Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences, vol.354, no.1717, pp.2383, 1996.
8.
Yu Zhu, Yoshiteru Ishimaru, Naoki Takahashi, Masafumi Shimizu, "Al composition dependence of Schottky barrier heights and conduction band offsets of AlxIn1−xP/Ga0.47In0.53As on InP", Journal of Applied Physics, vol.80, no.3, pp.1617, 1996.
