Abstract:
InGaAs-InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output freque...Show MoreMetadata
Abstract:
InGaAs-InAlAs single-barrier varactor (SBV) diodes are tested as frequency quintuplers. The diodes were tested in a crossed-waveguide structure and provided output frequencies between 148 and 187 GHz. The highest observed flange-to-flange efficiency was 0.78% at an output frequency of 172 GHz. This is nearly four times greater than the best quintupler efficiency obtained for previous SBV varactors made from the GaAs-AlGaAs materials system.<>
Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 43, Issue: 3, March 1995)
DOI: 10.1109/22.372117
Radio Laboratory, Helsinki University of Technology, Espoo, Finland
Radio Laboratory, Helsinki University of Technology, Espoo, Finland
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Department of Applied Electron Physics, Chalmers University of Technology, Goteborg, Sweden
Department of Applied Electron Physics, Chalmers University of Technology, Goteborg, Sweden
Radio Laboratory, Helsinki University of Technology, Espoo, Finland
Radio Laboratory, Helsinki University of Technology, Espoo, Finland
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, USA
Department of Applied Electron Physics, Chalmers University of Technology, Goteborg, Sweden
Department of Applied Electron Physics, Chalmers University of Technology, Goteborg, Sweden
