Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides | IEEE Journals & Magazine | IEEE Xplore

Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides


Abstract:

The authors present direct evidence for the creation of deep electron traps in SIMOX (separation by implantation of oxygen) buried oxides. In addition, they present combi...Show More

Abstract:

The authors present direct evidence for the creation of deep electron traps in SIMOX (separation by implantation of oxygen) buried oxides. In addition, they present combined electrical and electron spin resonance evidence which demonstrates that at least some positively charged paramagnetic E' centers are compensated by negatively charged centers. Finally, they present evidence which strongly suggests that a substantial fraction of the deep electron traps are coupled to E' centers.<>
Published in: IEEE Transactions on Nuclear Science ( Volume: 39, Issue: 6, December 1992)
Page(s): 2114 - 2120
Date of Publication: 31 December 1992

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