Abstract:
Molecular beam epitaxy techniques used to grow uniform and graded-composition InGaAlAs alloys spanning the entire range from In/sub 0.53/Ga/sub 0.47/As to In/sub 0.52/Al/...Show MoreMetadata
Abstract:
Molecular beam epitaxy techniques used to grow uniform and graded-composition InGaAlAs alloys spanning the entire range from In/sub 0.53/Ga/sub 0.47/As to In/sub 0.52/Al/sub 0.48/As are reported. The compositional grading was achieved by flux modulation through effusion cell temperature control, under the supervision of a personal computer. It was found from double-crystal X-ray diffraction studies that maintaining the lattice-matching condition through a graded region is not significantly more difficult than achieving the initial lattice-matching conditions for the two ternary constituents of the graded quaternary alloy. The graded-layer growth procedure was extended to take into account thermal transients in the effusion cells and applied to the removal of shutter transients.<>
Date of Conference: 23-25 April 1990
Date Added to IEEE Xplore: 06 August 2002
Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
Department of Electrical Engineering and Computer Science and Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
