Abstract:
The present status and prospects of heterojunction bipolar transistors configured with InP, InGaAs and/or InAlAs on InP substrates are reviewed. The importance of ultrahi...Show MoreMetadata
Abstract:
The present status and prospects of heterojunction bipolar transistors configured with InP, InGaAs and/or InAlAs on InP substrates are reviewed. The importance of ultrahigh electron velocity is highlighted. Self-aligned fabrication techniques are described, and devices with wide bandgap collectors for microwave power applications and with low turn-on voltage for digital applications are presented. Applications are discussed. Frequency dividers configured with these devices have operated to 17 GHz.<>
Date of Conference: 23-25 April 1990
Date Added to IEEE Xplore: 06 August 2002
