Abstract:
The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated ...Show MoreMetadata
Abstract:
The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 36, Issue: 2, February 1989)
DOI: 10.1109/16.19942
