Abstract:
Thermal properties and temperature dependency of semiconductor parameters are well-known phenomena. For power electronic components knowledge of temperature evolution can...Show MoreMetadata
Abstract:
Thermal properties and temperature dependency of semiconductor parameters are well-known phenomena. For power electronic components knowledge of temperature evolution can lead to a better utilization of the component. In this paper different direct and indirect experimental temperature and power loss measurements are discussed. Besides, different component thermal models based on the finite element method are developed and the results of these experimental measurements and simulations applied to power IGBTs are presented and compared.<>
Date of Conference: 22-22 October 1992
Date Added to IEEE Xplore: 06 August 2002
Conference Location: Birmingham, UK
