Abstract:
The electrical and reliability characteristics of ultrathin nonstoichiometric silicon oxide (SiO/sub x/, x<2) films deposited by the low-pressure chemical vapor deposition (LPCVD) technique using silane and nitrous oxide were studied. It has been found that these oxides exhibit enhanced current conduction at low electric field for both voltage polarities due to reduced conduction barrier height and a conduction mechanism that involves direct tunneling between dispersed silicon crystallites in the oxide. The current characteristics are controlled by adjusting the SiH/sub 4//N/sub 2/O gas ratio. These nonstoichiometric films exhibit lower charge trapping, have an extremely large charge to breakdown, and there is negligible interface state generation in comparison to ultrathin thermal oxides. The results indicate that these highly reliable dielectrics can be promising candidates for nonvolatile memory applications.<>Metadata
Abstract:
The electrical and reliability characteristics of ultrathin nonstoichiometric silicon oxide (SiO/sub x/, x<2) films deposited by the low-pressure chemical vapor deposition (LPCVD) technique using silane and nitrous oxide were studied. It has been found that these oxides exhibit enhanced current conduction at low electric field for both voltage polarities due to reduced conduction barrier height and a conduction mechanism that involves direct tunneling between dispersed silicon crystallites in the oxide. The current characteristics are controlled by adjusting the SiH/sub 4//N/sub 2/O gas ratio. These nonstoichiometric films exhibit lower charge trapping, have an extremely large charge to breakdown, and there is negligible interface state generation in comparison to ultrathin thermal oxides. The results indicate that these highly reliable dielectrics can be promising candidates for nonvolatile memory applications.<>
Published in: IEEE Electron Device Letters ( Volume: 13, Issue: 12, December 1992)
DOI: 10.1109/55.192865
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1.
S. K. Lai, V. K. Dham and D. Guterman, "Comparison and trends in today's dominant E2 technologies", IEDM Tech. Dig., pp. 580-583, 1986.
2.
H. A. R. Wegner, "Endurance model for textured-poly floating gate memories", IEDM Tech. Dig., pp. 480, 1984.
3.
D. J. DiMaria, K. M. DeMeyer, C. M. Serrano and D. W. Dong, "Electrically-alterable read-only-memory using Si-rich SiO2 injectors and a floating polycrystalline silicon storage layer", J. Appl. Phys., vol. 52, pp. 4825, 1981.
4.
A. J. Learn and R. B. Jackson, "Characterization of oxide growth at high temperatures and low pressures from silane/nitrous oxide reaction", J. Electrochem. Soc., vol. 132, pp. 2975-2980, 1985.
5.
A. V. Dvurcchensky, F. L. Edelman and I. A. Ryazantsev, "The phase composition of SiOx films", Thin Solid Films, vol. 91, pp. L55, 1982.
6.
D. J. DiMaria and D. W. Dong, "High current injection into SiO2 from Si-rich SiO2 films and experimental applications", J. Appl. Phys., vol. 51, no. 5, pp. 2722, 1980.
7.
D. J. DiMaria, D. W. Dong and F. L. Pesavento, "Enhanced conduction and minimized charge trapping in electrically alterable read-only memories using off-stoichiometric silicon dioxide films", J. Appl. Phys., vol. 55, no. 8, pp. 3000, 1984.
8.
D. Dong, E. A. Irene and D. R. Young, "Preparation and some properties of chemically vapor-deposited Si-rich Si02 and Si^ N4 films", J. Electrochem. Soc., vol. 125, no. 5, pp. 819, 1978.
9.
I. C. Chen, S. Holland and C. Hu, "Hole trapping and breakdown in thin SiO2", IEEE Electron Device Lett., vol. EDL-7, pp. 164, 1986.
