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Polyharmonic distortion modeling | IEEE Journals & Magazine | IEEE Xplore

Polyharmonic distortion modeling


Abstract:

For more than a quarter of a century, microwave engineers have had the benefit of a foundation of mutually interacting components of measurement, modeling, and simulation...Show More

Abstract:

For more than a quarter of a century, microwave engineers have had the benefit of a foundation of mutually interacting components of measurement, modeling, and simulation to design and test linear components and systems. S-parameters are perhaps the most successful behavioral models ever. They have the powerful property that the S-parameters of individual components are sufficient to determine the S-parameters of any combination of those components. S-parameters of a component are sufficient to predict its response to any signal, provided only that the signal is of sufficiently small amplitude. We have presented the PHD modeling approach. It is a black-box frequency-domain model that provides a foundation for measurement, modeling, and simulation of driven nonlinear systems. The PHD model is very accurate for a wide variety of nonlinear characteristics, including compression, AM-PM, harmonics, load-pull, and time-domain waveforms. The PHD model faithfully represents driven nonlinear systems with mismatches at both the fundamental and harmonics. This enables the accurate simulation of distortion through cascaded chains of nonlinear components, thus providing key new design verification capabilities for RF and microwave modules and subsystems
Published in: IEEE Microwave Magazine ( Volume: 7, Issue: 3, June 2006)
Page(s): 44 - 57
Date of Publication: 30 June 2006

ISSN Information:


PHD Modeling

PHD modeling is a black-box, frequency-domain modeling technique. The annotation black box refers to the fact that no knowledge is used nor required concerning the internal circuitry of the DUT. All information needed to construct a PHD model is acquired through externally stimulating the signal ports of a DUT and measuring the response signals. The frequency domain formulation means that the approach is well suited for distributed (dispersive) high-frequency applications. This is true for both the measurement techniques and the modeling approach. Note that these considerations are true for conventional linear S-parameters, which can also be considered as a black-box frequency-domain modeling technique. The advantage of using a black-box approach is that it is truly technology independent. It does not matter whether one is dealing with silicon bipolar technology or compound semiconductor field-effect transistors. Another advantage is that a black-box model, unlike a circuit schematic, can be shared with and used by other people without revealing the details of the internal circuit. In other words, it provides complete and fundamental protection of intellectual property. This characteristic is highly appreciated in a business environment. Of course, with black-box modeling, as with all engineering solutions, there are tradeoffs to consider in practical use conditions. Black-box models are, by definition, only valid for signals that are close to the signals that were used to simulate the DUT to produce the responses used for model identification (extraction). If the model needs to be valid across a wide range of signals, then a wide range of excitation signals is needed and, as a result, the measurement time will be long and the resulting model will be complex.

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