I. Introduction
MOSFET has been mostly used in dc-dc converters in low-voltage applications. This is based on two distinct features. The first feature is that MOSFET on-drop is resistive, which is superior to IGBT in low voltages because its current related on-state voltage drop can be very low given sufficient chip area. The second feature is that the low voltage rating Schottky diode can be connected in anti-parallel to help solve the slow reverse recovery of body diode because Schottky diode has lower forward voltage drop and much faster reverse recovery characteristic than those of body diode. For high voltage high power applications, however, MOSFET is not favourable because of its high on-state voltage drop and unavailability of low voltage drop Schottky diode with high voltage rating. Therefore, high power application needs to find a way to reduce the MOSFET body diode reverse recovery loss.