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Use of a LiNbO3Modulator Gate in Amplification of Femtosecond Optical Pulses Generated by a Passively-Mode-Locked Erbium-Doped Fiber Laser | IEEE Conference Publication | IEEE Xplore

Use of a LiNbO3Modulator Gate in Amplification of Femtosecond Optical Pulses Generated by a Passively-Mode-Locked Erbium-Doped Fiber Laser


Abstract:

127-fs, 4-kW pulses by a mode-locked fiber laser were gated to reduce the repetition by a modulator and amplified by an EDFA. The net gain of 50 was 11 times that without...Show More

Abstract:

127-fs, 4-kW pulses by a mode-locked fiber laser were gated to reduce the repetition by a modulator and amplified by an EDFA. The net gain of 50 was 11 times that without a modulator.
Date of Conference: 14-14 July 2005
Date Added to IEEE Xplore: 10 January 2006
Print ISBN:0-7803-9242-6
Conference Location: Tokyo, Japan

1. Introduction

Femtosecond lasers are suitable for mircoprocessing of materials as they have a high peak power and thus nonlinear absorption or breakdown in the material can be used. Ti3+ sapphire lasers have been used for this purpose. Although fiber lasers are also suitable for ultrashort-pulse generation and have merits of relatively low cost and a compact structure, they have not been used. In this study we generated femtosecond pulses with a passively mode-locked fiber laser1)and amplified the pulses using an erbium-doped fiber amplifier (EDFA). Various femtosecond-pulse amplification systems have been studied,2, 3) and some of them employ an acousto-optic modulator gate. Here, we inserted a LiNbO3 (LN) modulator as a gate to reduce the repetition rate and to achieve high pulse energy.

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References

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