Abstract:
An approach is described for the calculation of binding energies of confined excitons in III-V semiconductors as functions of the quantum-well width. The method, which av...Show MoreMetadata
Abstract:
An approach is described for the calculation of binding energies of confined excitons in III-V semiconductors as functions of the quantum-well width. The method, which avoids the prescription of trial functions, provides direct interpretations of the dimensionality of the confined systems and shows evidence of greater flexibility than has been previously reported. Numerical results are provided concerning four technologically relevant material systems. With the method presented, the evolution of the exciton oscillator strength, as an explicit function of the well width, has been obtained. The analysis of the results suggests the formulation of scaling laws yielding the exciton properties as functions of the well width for all the materials considered.<>
Published in: IEEE Journal of Quantum Electronics ( Volume: 28, Issue: 8, August 1992)
DOI: 10.1109/3.142573
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Cites in Papers - |
Cites in Papers - IEEE (4)
Select All
1.
C.V.-B. Tribuzy, M.P. Pires, P.L. de Souza, B. Yavich, "Reliably designing InGaAs-InAlAs strained multiple-quantum-well structures for amplitude modulation", IEEE Transactions on Microwave Theory and Techniques, vol.52, no.6, pp.1592-1597, 2004.
2.
Xin Chen, W. Batty, M.P. Earnshaw, D.W.E. Allsopp, R. Grey, "Electroabsorption in narrow coupled double quantum wells: Coulombic coupling effects", IEEE Journal of Quantum Electronics, vol.34, no.7, pp.1180-1187, 1998.
3.
D.A. Trivedi, N.G. Anderson, "Modeling the near-gap refractive index properties of semiconductor multiple quantum wells and superlattices", IEEE Journal of Selected Topics in Quantum Electronics, vol.2, no.2, pp.197-209, 1996.
4.
P. Christol, P. Lefebvre, H. Mathieu, "A single equation describes excitonic absorption spectra in all quantum-sized semiconductors", IEEE Journal of Quantum Electronics, vol.30, no.10, pp.2287-2292, 1994.
Cites in Papers - Other Publishers (11)
1.
C. Lamberti, "The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films", Surface Science Reports, vol.53, no.1-5, pp.1, 2004.
2.
D. Hoffmann, "Optische Modulatoren und Schalter", Optische Kommunikationstechnik, pp.505, 2002.
3.
Yong Zhang, A. Mascarenhas, "Scaling of exciton binding energy and virial theorem in semiconductor quantum wells and wires", Physical Review B, vol.59, no.3, pp.2040, 1999.
4.
Christian Tanguy, Pierre Lefebvre, Henry Mathieu, R. J. Elliott, "Analytical model for the refractive index in quantum wells derived from the complex dielectric constant of Wannier excitons in noninteger dimensions", Journal of Applied Physics, vol.82, no.2, pp.798, 1997.
5.
Guy Debarge, Didier Erasme, Angel Toledo-Alvarez, "Analytical perturbation derivation of the exciton binding energy in generalized infinite quantum wells: Application to type-I and -II finite-quantum-well structures", Physical Review B, vol.53, no.7, pp.3983, 1996.
6.
I. Aksenov, J. Kusano, Y. Aoyagi, T. Sugano, T. Yasuda, Y. Segawa, "Effect of a magnetic field on the excitonic luminescence line shape in a quantum well", Physical Review B, vol.51, no.7, pp.4278, 1995.
7.
Domenico Campi, Claudio Coriasso, "Optical nonlinearities in multiple quantum wells: Generalized Elliott formula", Physical Review B, vol.51, no.16, pp.10719, 1995.
8.
Herbert F. Mataré, "Defect alignment in grain boundaries as quantum wells", Applied Physics Letters, vol.65, no.26, pp.3353, 1994.
9.
I. Queisser, V. Härle, A. Dörnen, F. Scholz, "Band discontinuity of strained-layer GaInAs/GaInAsP heterostructures", Applied Physics Letters, vol.64, no.22, pp.2991, 1994.
10.
D Munzar, L Bocaek, J Humlicek, K Ploog, "Fractal structure in optical spectra of Fibonacci superlattices", Journal of Physics: Condensed Matter, vol.6, no.22, pp.4107, 1994.
11.
Philippe Christol, Pierre Lefebvre, Henry Mathieu, "Fractional-dimensional calculation of exciton binding energies in semiconductor quantum wells and quantum-well wires", Journal of Applied Physics, vol.74, no.9, pp.5626, 1993.