Gain measurements of Fabry-Pe/spl acute/rot semiconductor lasers using a nonlinear least-squares fitting method | IEEE Journals & Magazine | IEEE Xplore

Gain measurements of Fabry-Pe/spl acute/rot semiconductor lasers using a nonlinear least-squares fitting method


Abstract:

A method for the measurement of the gain-reflectance product of Fabry-Pe/spl acute/rot (F-P) semiconductor lasers is proposed and compared to other techniques. The method...Show More

Abstract:

A method for the measurement of the gain-reflectance product of Fabry-Pe/spl acute/rot (F-P) semiconductor lasers is proposed and compared to other techniques. The method is based on a nonlinear, least-squares fitting of the F-P modes to an Airy function. A separate fitting is performed over each mode, as measured with an optical spectrum analyzer (OSA), so that the gain-reflectance parameters are extracted. The influence of the OSAs response function is considered by convolution of the Airy function with the response function of the OSA. By comparing with the Hakki-Paoli method, the mode sum/min method, and the Fourier series expansion method, we find that the nonlinear fitting method is the least sensitive to noise. However, owing to a broadening of the F-P modes of the semiconductor laser, the mode sum/min method combined with a deconvolution technique gives the least underestimated gain above threshold.
Published in: IEEE Journal of Quantum Electronics ( Volume: 41, Issue: 4, April 2005)
Page(s): 532 - 540
Date of Publication: 30 April 2005

ISSN Information:

References is not available for this document.

I. Introduction

The optical gain of a semiconductor laser is an important parameter for device performance and design, especially for widely-tunable lasers [1] and high-speed lasers [2]. The techniques for measurement of gain have been investigated intensively for more than two decades. Theoretically, the gain spectrum can be obtained by the definition: illuminate one facet of the laser with some probe light and measure the powers of the input light and of the output light from another facet. The ratio of the output to input power gives the single-pass modal gain [3]. However, this method requires a widely tunable light source as the probe, a wideband antireflection coating of the laser facets, and an accurate estimate of the coupling efficiency. All of these are difficult to obtain. Therefore, people usually use other methods to measure the gain.

Select All
1.
S. C. Woodworth, D. T. Cassidy and M. J. Hamp, "Experimental analysis of a broadly tunable InGaAsP laer with compositionally varied quantum wells", IEEE J. Quantum Electron., vol. 39, no. 2, pp. 426-430, Mar. 2003.
2.
J. D. Ralston, S. Weisser, I. Esquivias, E. C. Larkins, J. Rosenzweig, P. Tasker, et al., "Control of differential gain nonlinear gain and damping-factor for high-speed application for GaAs-based MQW lasers", IEEE J. Quantum Electron., vol. 29, no. 6, pp. 1648-1655, Jun. 1993.
3.
C. Ellmers, "Measurement and calculation of gain spectra for (GaIn)As/(AlGa)As single quantum well lasers", Appl. Phys. Lett., vol. 72, no. 13, pp. 1647-1649, 1998.
4.
P. S. Cross and W. G. Oldham, "Theory of optical-gain measurements", IEEE J. Quantum Electron., vol. 11, no. 5, pp. 190-197, May 1999.
5.
C. H. Henry, R. A. Logan and F. R. Merritt, "Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers", J. Appl. Phys., vol. 51, no. 6, pp. 3042-3050, 1980.
6.
J. D. Thomson, H. D. Summers, P. J. Hulyer, P. M. Smowton and P. Blood, "Determination of single-pass optical gain and internal loss using a multisection device", Appl. Phys. Lett., vol. 75, no. 17, pp. 2527-2529, 1998.
7.
B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs double-Heterostructure injection lasers", J. Appl. Phys., vol. 46, no. 3, pp. 1299-1305, 1975.
8.
D. T. Cassidy, "Technique for measurement of the gain spectra of semiconductor diode lasers", J. Appl. Phys., vol. 56, no. 11, pp. 3096-3099, 1984.
9.
D. Hofstetter and J. Faist, "Measurement of semiconductor laser gain and dispersion curves utilizing Fourier transforms of the emission spectra", IEEE Photon. Technol. Lett., vol. 11, no. 11, pp. 1372-1374, Nov. 1999.
10.
W. H. Guo, Q. Y. Lu, Y. X. Huang and L. J. Yu, "Fourier series expansion method for gain measurement from amplified spontaneous emission spectra of Fabry̵Pérot semiconductor lasers", IEEE J. Quantum Electron., vol. 40, no. 2, pp. 123-129, Feb. 2004.
11.
W. H. Guo, Y. Z. Huang, C. L. Han and L. J. Yu, "Measurement of gain for Fabry̵Pérot semiconductor lasers by the fourier transform method with a deconvolution process", IEEE J. Quantum Electron., vol. 39, no. 6, pp. 716-721, Jun. 2003.
12.
E. I. Gordon, "Optical maser oscillators and noise", Bell Syst. Tech. J., vol. 43, pp. 507-539, 1964.
13.
G. B. Morrison and D. T. Cassidy, "A probability-amplitude transfer matrix model for distributed-feedback laser structures", IEEE J. Quantum Electron., vol. 36, no. 6, pp. 633-970, Jun. 2000.
14.
H. Wenzel, "Green's function based simulation of the optical spectrum of multisection lasers", IEEE J. Sel. Topics Quantum Electron., vol. 9, no. 3, pp. 665-670, May̵Jun. 2003.
15.
P. R. Bevington and D. K. Robinson, "8" in Data Reduction and Error Analysis for the Physical Sciences, New York:McGraw-Hill, pp. 141, 1992.
16.
W. H. Press, S. A. Teukolsky, W. T. Vetterling and B. P. Flannery, "15" in Numerical Recipes in Fortran, New York:Cambridge Univ. Press, 1992.
17.
M. W. Fleming and A. Mooradian, "Fundamental line broadening of single-mode (GaAl)As diode lasers", Appl. Phys. Lett., vol. 38, no. 7, pp. 511-513, 1981.
18.
Blind Deconvolution, NJ, Upper Saddle River:Prentice-Hall, 1994.
19.
C. H. Henry, "Theory of the linewidth of semiconductor lasers", IEEE J. Quantum Electron., vol. QE-18, no. 2, pp. 259-264, Feb. 1982.
20.
C. H. Henry, "Phase noise in semiconductor lasers", J. Lightw. Technol., vol. LT-4, no. 3, pp. 298-311, Mar. 1986.
Contact IEEE to Subscribe

References

References is not available for this document.