Contents I. Introduction
The growing importance of high-speed magnetoelectronics has encouraged a large and growing research effort directed at the understanding of the dynamics of magnetization reversal in submicrometer-sized magnetic structures. The patterned submicrometer arrays are of particular interest for technological applications such as magnetoresistive random access memory (MRAM). The bits in MRAM consist of magnetic tunnel junction (MTJs) that contain magnetic freelayers, the magnetization direction of which relative to a fixed magnetic layer determines the bit state (1 or 0). In the MRAM array, a specific cell is selected for data writing by two orthogonal magnetic fields that are simultaneously generated by two crossed current lines.
