Abstract:
Low-voltage silicon trench power MOSFETs with forward conductivities approaching the silicon limit are reported. Vertical trench power MOSFETs with the measured performan...Show MoreMetadata
Abstract:
Low-voltage silicon trench power MOSFETs with forward conductivities approaching the silicon limit are reported. Vertical trench power MOSFETs with the measured performances of V/sub DB/=55 V (R/sub sp/=0.2 m Omega -cm/sup 2/, k/sub D/=5.7 Omega -pF) and V/sub DB/=35 V (R/sub sp/=0.15 m Omega -cm/sup 2/, k/sub D/=4.3 Omega -PF) were developed where V/sub DB/ is the drain-source avalanche breakdown voltage, R/sub sp/ is the specific on-state resistance, and k/sub D/=R/sub sp/C/sub sp/ is the input device technology factor where C/sub sp/ is the specific MOS gate input capacitance. The optimum device performance resulted from an advanced trench processing technology that included (1) an improved RIE process to define scaled vertical silicon trenches, (2) silicon trench sidewall cleaning to reduce the surface damage, and (3) a novel polysilicon gate planarization technique using a sequential oxidation/oxide etchback, process. The measured performances are shown to be in excellent agreement with the two-dimensional device simulations and the calculated results obtained from an analytical model.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 39, Issue: 6, June 1992)
DOI: 10.1109/16.137324
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Power Devices ,
- Trench MOSFETs ,
- Excellent Agreement ,
- Reactive Ion Etching ,
- Two-dimensional Simulations ,
- Input Capacitance ,
- Power MOSFETs ,
- Reactive Ion Etching Process ,
- Vertical Power ,
- Carrier Mobility ,
- Silicon Wafer ,
- Regular Grid ,
- Contact Resistance ,
- I-V Curves ,
- Silicon Substrate ,
- Gate Electrode ,
- Plasma Etching ,
- Cleaning Process ,
- Silicon Surface ,
- Oxide Thickness ,
- Drift Region ,
- Gate Oxide ,
- Doping Profile ,
- 2D Simulations ,
- Silicide ,
- Power Semiconductor ,
- Channel Resistance ,
- Transmission Electron Microscopy Pictures
Keywords assist with retrieval of results and provide a means to discovering other relevant content. Learn more.
- IEEE Keywords
- Index Terms
- Power Devices ,
- Trench MOSFETs ,
- Excellent Agreement ,
- Reactive Ion Etching ,
- Two-dimensional Simulations ,
- Input Capacitance ,
- Power MOSFETs ,
- Reactive Ion Etching Process ,
- Vertical Power ,
- Carrier Mobility ,
- Silicon Wafer ,
- Regular Grid ,
- Contact Resistance ,
- I-V Curves ,
- Silicon Substrate ,
- Gate Electrode ,
- Plasma Etching ,
- Cleaning Process ,
- Silicon Surface ,
- Oxide Thickness ,
- Drift Region ,
- Gate Oxide ,
- Doping Profile ,
- 2D Simulations ,
- Silicide ,
- Power Semiconductor ,
- Channel Resistance ,
- Transmission Electron Microscopy Pictures
