Measurement of two-photon absorption in AlGaInAs strained-layer multiple-quantum-well devices at communications wavelengths | IEEE Conference Publication | IEEE Xplore

Measurement of two-photon absorption in AlGaInAs strained-layer multiple-quantum-well devices at communications wavelengths


Abstract:

Two-photon absorption was measured in AlGaInAs strained-layer multiple-quantum-well active waveguide devices at wavelengths near the 1575 nm band-gap. Values around 400 c...Show More

Abstract:

Two-photon absorption was measured in AlGaInAs strained-layer multiple-quantum-well active waveguide devices at wavelengths near the 1575 nm band-gap. Values around 400 cm/GW were obtained, much larger than that predicted by a commonly used scaling law.
Date of Conference: 16-21 May 2004
Date Added to IEEE Xplore: 13 December 2004
Print ISBN:1-55752-777-6
Conference Location: San Francisco, CA, USA

Multiple-quantum-well laser diodes and semiconductor optical amplifiers made in the AlGaInAs quaternary material system are of interest in telecommunications because of their promising peak and differential gain performance, low transparency carrier density [1] and good thermal properties. In addition, AlGaInAs is an attractive material because its band gap can be tuned over communications wavelengths by varying the composition, and can be grown on InP substrates [2]. However two-photon-absorption (TPA) is an important characteristic that limits the practicality of a material, and is particularly detrimental in laser diodes and in semiconductor optical amplifiers used for short pulse amplification TPA also acts to reduce the figure of merit of all-optical switching devices [3], [4]. It is therefore important to reduce TPA in semiconductor devices at the wavelengths and polarizations that the device is to operate. In this work we report on measurements of linear and two-photon absorption (TPA) of strained-layer multiple-quantum-well (MQW) AlGaInAs-based active devices fabricated for telecommunications applications.

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