Introduction
With the continual evolution of process technologies from 90nm and beyond, there has been sufficient evidence of increasing process complexities (1). In addition to this, 90nm fabrication costs are rising. The total cost of a set of 40 masks can approach 1.5 million dollars, making ASICs financially justifiable only for very high volume and high revenue designs. This favors FPGA adoption in previously low-medium volume ASIC-centric sockets. However, the increased process complexities/deviations at the 90nm node and beyond have created design challenges for FPGAs. As the transistor dimensions shrink, leakage currents have increased exponentially. Sub-threshold leakage, which was largely considered negligible in older technologies, has become a major concern at the 90nm process, especially on high gate-count devices like FPGAs. Higher current leads to higher junction temperature, which causes performance degradation, reliability issues such as electro-migration or even instant damages to the silicon and package. It has therefore become essential to have a 90nm-centric power analysis strategy for FPGAs, similar to the efforts targeting other semiconductor devices (2) (3).