Abstract:
The relationship between device performance and trap state density in polysilicon films was investigated. The density in the silicon energy gap was obtained by fitting th...Show MoreMetadata
Abstract:
The relationship between device performance and trap state density in polysilicon films was investigated. The density in the silicon energy gap was obtained by fitting the calculated on-state current versus gate voltage curve to the measured one for low-temperature (>
Published in: IEEE Transactions on Electron Devices ( Volume: 39, Issue: 4, April 1992)
DOI: 10.1109/16.127467