Loading [MathJax]/extensions/MathMenu.js
Sub-half-micrometer concave MOSFET with double LDD structure | IEEE Journals & Magazine | IEEE Xplore

Sub-half-micrometer concave MOSFET with double LDD structure


Abstract:

The double lightly doped drain concave (DLC) MOSFET has been developed for sub-half-micrometer MOSFETs which can operate at a 5-V supply voltage. This structure has an im...Show More

Abstract:

The double lightly doped drain concave (DLC) MOSFET has been developed for sub-half-micrometer MOSFETs which can operate at a 5-V supply voltage. This structure has an impurity profile of n/sup +/-n/sup -/-p/sup -/-p along the sidewall of the groove. It is found that the DLC MOSFET has excellent characteristics, such as high drain sustaining voltage, less short-channel effect, high current drivability, and high reliability, due to the double LDD concave structure. The DLC MOSFET is one of the most promising device structures for sub-half-micrometer MOSFETs.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 39, Issue: 3, March 1992)
Page(s): 671 - 676
Date of Publication: 06 August 2002

ISSN Information:


Contact IEEE to Subscribe

References

References is not available for this document.