I. Introduction
Many numerical techniques have been developed to model and simulate RF, microwave, and optical circuits and components. In particular, finite-difference time-domain (FDTD) algorithms have been shown thus far to be the powerful tools to predict RF wave behaviors in various circuit media [1], except for the highly conductive materials. In a highly conductive medium, due to the skin effect, a very fine mesh is required to account for the rapidly changing fields. Such a fine mesh leads to a small cell size, which, in turn, forces the time step to be small because of the Courant–Friedrich–Levy stability (CFL) condition. In a normal circumstance at a microwave frequency, the time step is so small that it makes the number of FDTD iterations very large even for simulation of one cycle of a microwave signal. Consequently, effective schemes need to be developed for modeling of highly conductive materials.