Evaluation of mobility in the MOSFET with high leakage current

We applied a transmission-line circuit model to MOSFETs with a high gate leakage current, and extracted the mobility precisely. The model was verified by a frequency dependence of the capacitance. We found that the channel length should be short enough to suppress the voltage drop along the channel. The obtained mobility using sets of test chips with different channel length with a 1.5 nm-thick gate oxide agreed well with theoretical calculations.