I. Introduction
Since its introduction [1], a gated diode (GD) has proven successful in the separation of different contributions to the leakage current of a p-n junction. The GD structure enables to separate the planar (area) leakage component, which source is the bulk region of the diode, from the component generated at the interface. In this way, a simultaneous assessment of the substrate (i.e., bulk, volume) and surface generation or recombination parameters is achieved, which is vital information for the operation of most silicon devices.