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Trends in optocoupler radiation degradation | IEEE Journals & Magazine | IEEE Xplore

Trends in optocoupler radiation degradation


Abstract:

Proton-radiation test results for new optocoupler technologies are compared with those of older optocouplers. The new devices are far more resistant to displacement damag...Show More

Abstract:

Proton-radiation test results for new optocoupler technologies are compared with those of older optocouplers. The new devices are far more resistant to displacement damage effects and have a much higher current-transfer ratio (CTR). The improvements are due to improved optical-coupling efficiency in combination with light-emitting diode (LED) technologies that are inherently more resistant to lifetime degradation. Because of these changes, CTR degradation is no longer dominated by LED damage. LED degradation, gain degradation, and photoresponse degradation all contribute to the overall changes in CTR after irradiation in the newer device types.
Published in: IEEE Transactions on Nuclear Science ( Volume: 49, Issue: 6, December 2002)
Page(s): 2868 - 2873
Date of Publication: 31 December 2002

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I. Introduction

Optocouplers are simple devices compared to conventional integrated circuits, but they have proven to be somewhat difficult to use in space because they require high internal gain to amplify photocurrent produced by internal light-emitting diodes (LEDs) (net power transfer from the LED to the photodetector is on the order of 0.1%). Space failures have occurred from two different mechanisms: displacement damage from high-energy protons, which produces Properties of the Optocouplers Used in the Study

Device Manu- facturer Input Current (mA) Current Transfer Ratio LED Technology
6N139 Agilent 0.5 20 Double-Het
HCPL4701 Agilent 0.04 35 Double-Het
HCNR200 Agilent 0.1–10 0.005* Double-Het.
4N49 Micropac 1 2 Amphoteric
*The HCNR200 contains no active gain elements. The current transfer ratio is the ratio between current in either of the two photodiodes to the forward current of the LED.

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