I. Introduction
Today, to develop 3D NAND beyond 1K layers, extensive research has focused on materials, structures, and fabrications for various cell components. Among these, the gate-injection type FeNAND cell featuring a metal-gate interlayer (G.IL)-FE-channel interlayer (Ch.IL)-Si (MIFIS) structure has attracted massive attention as a viable future NAND cell candidate [1] (Figs. 1(a) and 1(b)). It exhibits wide MW (>10V) and low PGM voltage (<17V) [2]. However, gate-injected interface trap charges between G.IL and FE are located at shallow trap levels, causing critical retention loss [3]. Also, applying a high- FE lowers but increases disturbance vulnerability [4].