Low Temperature Crystallization of Amorphous InGaO by Ar Plasma Treatment for Thin Film Transistors

We investigated the effect of Ar plasma treatment on the crystallization of indium-gallium-oxide (IGO) thin films. Ar plasma treatment accelerates the crystallization of amorphous IGO at 350 °C, as confirmed by XRD analysis. The crystalline IGO TFT using Ar plasma treatment exhibited field-effect mobility (μ_FE) of 43.2 cm²/V·s and subthreshold swing (SS) of 0.11 V/dec. In addition, IGO TFTs showed excellent operation stabilities under both positive bias temperature stress (PBTS) and negative bias temperature stress (NBTS) conditions. These results demonstrate that Ar plasma treatment is a promising technique for achieving high-performance IGO TFTs at low temperature, making it suitable for flexible display application.