Abstract:
The heat transfer to a wafer in a rapid thermal processing (RTP) furnace is simulated by an analytical/numerical model. The model includes radiation heat transfer to the ...Show MoreMetadata
Abstract:
The heat transfer to a wafer in a rapid thermal processing (RTP) furnace is simulated by an analytical/numerical model. The model includes radiation heat transfer to the wafer from the lamps, heat conduction within the wafer, and emission of radiation from the wafer. Geometric optics are used to predict the radiant heat flux distribution over the wafer. The predicted wafer surface temperature distribution is compared to measurements made in an RTP furnace for two different reflector geometries. Lamp configurations and the resulting irradiance required to produce a uniform wafer temperature are defined.<>
Published in: IEEE Transactions on Electron Devices ( Volume: 39, Issue: 1, January 1992)
DOI: 10.1109/16.108214
Citations are not available for this document.
Cites in Patents (14)Patent Links Provided by 1790 Analytics
1.
Adams, Bruce; Hunter, Aaron; Rubinchik, Alex; Yam, Mark; O'Brien, Paul A., "APPARATUS FOR SUBSTRATE TEMPERATURE MEASUREMENT USING A REFLECTING CAVITY AND DETECTOR"
Inventors:
Adams, Bruce; Hunter, Aaron; Rubinchik, Alex; Yam, Mark; O'Brien, Paul A.
Abstract:
A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.
Assignee:
APPLIED MATERIALS INC
Filing Date:
06 August 1998
Grant Date:
06 February 2001
Patent Classes:
Current U.S. Class:
374131000, 219405000, 374121000, 374130000
Current International Class:
G01J0050800000, G01J0050000000, A21B0010000000
2.
Peuse, Bruce W.; Miner, Gary E.; Yam, Mark; Hunter, Aaron; Knoot, Peter; Mershon, Jason, "METHOD AND APPARATUS FOR MEASURING SUBSTRATE TEMPERATURES"
Inventors:
Peuse, Bruce W.; Miner, Gary E.; Yam, Mark; Hunter, Aaron; Knoot, Peter; Mershon, Jason
Abstract:
A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature and using a first, a second and a third probe to measure the temperature of the substrate. The first probe has a first effective reflectivity and the second probe has a second effective reflectivity. The first probe produces a first temperature indication, the second probe produces a second temperature indication and the third probe produces a third temperature indication. The first and second effective reflectivities may be different. From the first and second temperature indications, a corrected temperature reading for the first probe may be derived, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes. A corrected temperature reading for the third probe may be derived by adjusting the temperature correction calculated for the first probe according to the measured emissivity sensitivity associated with the environment of the third probe to provide a corrected temperature reading that is a more accurate indicator of an actual temperature of the substrate in the environment of the third probe. An apparatus for carrying out the method is also disclosed.
Assignee:
APPLIED MATERIALS INC
Filing Date:
18 March 1998
Grant Date:
30 January 2001
Patent Classes:
Current U.S. Class:
374128000, 374002000, 374110000, 374126000
Current International Class:
G01J0050000000, G01K0150000000
3.
Jennings, Dean, "APPARATUS AND METHODS FOR MEASURING SUBSTRATE TEMPERATURE"
Inventors:
Jennings, Dean
Abstract:
An apparatus for measuring the temperature of a substrate in a thermal processing chamber is disclosed. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The apparatus includes a first polarizer positioned to polarize radiation reflected by the reflector, a probe having an input end positioned to receive reflected and non-reflected radiation from the reflecting cavity, a polarizing system optically coupled to an output end of the probe, and a detector apparatus optically coupled to the polarizing system. The polarizing system is configured to generate a first beam and a second beam, and it includes a second polarizer oriented such that a ratio of reflected radiation to non-reflected radiation is higher in the first beam than the second beam. The detector apparatus generates a first intensity signal from the first beam and a second intensity signal from the second beam. The two intensity signals are processed to determine an emissivity-corrected substrate temperature.
Assignee:
APPLIED MATERIALS INC
Filing Date:
06 August 1998
Grant Date:
16 January 2001
Patent Classes:
Current U.S. Class:
374131000, 219405000, 374130000
Current International Class:
G01J0055800000, G01J0050000000, A21B0010000000
4.
Aderhold, Wolfgang; Mayur, Abhilash J.; Knoot, Peter A., "TUNING A SUBSTRATE TEMPERATURE MEASUREMENT SYSTEM"
Inventors:
Aderhold, Wolfgang; Mayur, Abhilash J.; Knoot, Peter A.
Abstract:
A technique and system for tuning temperature sensor readings in a thermal processing chamber includes determining an actual temperature profile for a substrate based on measurements of the substrate. A simulated temperature profile for the substrate is calculated using a respective interim temperature correction value for one or more temperature sensors associated with the chamber. A Gaussian-like distribution for thermal contributions from multiple radiation sources in the chamber can be used to simulate the temperature profile. The simulated temperature profile and the actual temperature profile are combined to form an estimated temperature profile. A final value for each respective temperature correction value is determined using an optimization algorithm which results in the estimated temperature profile being substantially uniform across the surface of the substrate. Each final temperature correction value is used as an offset to temperature measurements obtained from the corresponding temperature sensors.
Assignee:
APPLIED MATERIALS INC
Filing Date:
14 August 1998
Grant Date:
26 December 2000
Patent Classes:
Current U.S. Class:
374001000, 356043000, 374124000, 374141000, 702130000
Current International Class:
G01K0150000000
5.
Yam, Mark; Hunter, Aaron M., "APPARATUS AND METHOD FOR MEASURING SUBSTRATE TEMPERATURE"
Inventors:
Yam, Mark; Hunter, Aaron M.
Abstract:
An apparatus for measuring the temperature of a substrate in a thermal processing chamber. The substrate is suspended above a reflector to form a reflecting cavity. A probe of a temperature sensor has an input end positioned to receive radiation from the reflecting cavity and an output end optically coupled to a detector to provide a temperature reading. The temperature sensor is configured to reduce the effect that radiation which has an axis of propagation within an angle of an axis normal to the reflector, e.g., substantially normal radiation from a portion of the substrate adjacent to the input end of the probe, has on the temperature reading.
Assignee:
APPLIED MATERIALS INC
Filing Date:
20 February 1998
Grant Date:
28 December 1999
Patent Classes:
Current U.S. Class:
374131000, 219405000, 374130000
Current International Class:
G01J0050600000, G01J0050800000
6.
Thakur, Randhir P. S.; Sandhu, Gurtej S.; Martin, Annette L., "METHOD FOR REPEATABLE TEMPERATURE MEASUREMENT USING SURFACE REFLECTIVITY"
Inventors:
Thakur, Randhir P. S.; Sandhu, Gurtej S.; Martin, Annette L.
Abstract:
A method is disclosed for continuously measuring the temperature of a semiconductor substrate in a chamber is disclosed. The first step of the method involves providing a substantially clean semiconductor substrate having a layer a reflective surface thereon into a chamber. A film is formed superjacent the surface by introducing a gas comprising at least one of N.sub.2, NH.sub.3, O.sub.2, N.sub.2 O, Ar, Ar--H.sub.2, H.sub.2, GeH.sub.4, or any fluorine based gas and photon energy in situ. The photon energy, having a wavelength substantially in the absorption band of silicon, generates a temperature substantially within the range of 500.degree. C. to 1250.degree. C. Subsequently, the reflectivity of the surface is measured prior to introducing the gas, and continuously, while forming the film until the film is substantially formed. The substrate is exposed to photon energy having a power level responsive to the measured reflectivities of the film.
Assignee:
MICRON TECHNOLOGY INC
Filing Date:
27 September 1996
Grant Date:
19 January 1999
Patent Classes:
Current U.S. Class:
374161000, 356043000, 374129000
Current International Class:
G01J0055400000
7.
Peuse, Bruce W.; Miner, Gary E.; Yam, Mark, "METHOD OF CALIBRATING A TEMPERATURE MEASUREMENT SYSTEM"
Inventors:
Peuse, Bruce W.; Miner, Gary E.; Yam, Mark
Abstract:
A method of calibrating a temperature measurement system including the steps of heating a first substrate having a high emissivity value to a first process temperature; while the first substrate is at the first process temperature, calibrating a first probe and a second probe to produce temperature indications from the first substrate that are substantially the same, the first probe having associated therewith a first effective reflectivity and the second probe having associated therewith a second effective reflectivity, the first and second effective reflectivities being different; heating a second substrate having a low emissivity value to a second process temperature, the low emissivity value being lower than the high emissivity value; with the second substrate at the second process temperature, using both the first probe and the second probe to measure the temperature of the second substrate, the first probe producing a first temperature indication and the second probe producing a second temperature indication different from the first temperature indication; measuring a sensitivity of the temperature indication produced by the first probe to changes in substrate emissivity; and by using the measured sensitivity and the first and second temperature indications, computing a correction factor for the first probe, the correction factor to be applied to subsequent temperature readings of the first probe to produce corrected temperature readings.
Assignee:
APPLIED MATERIALS INC
Filing Date:
20 May 1996
Grant Date:
15 December 1998
Patent Classes:
Current U.S. Class:
374001000, 374002000, 977918000
Current International Class:
G01K0510000000
8.
Peuse, Bruce W.; Miner, Gary E.; Yam, Mark, "METHOD AND APPARATUS FOR MEASURING SUBSTRATE TEMPERATURES"
Inventors:
Peuse, Bruce W.; Miner, Gary E.; Yam, Mark
Abstract:
A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first, a second and a third probe to measure the temperature of the substrate, the first and third probes having a first effective reflectivity and the second probe having a second effective reflectivity, the first probe producing a first temperature indication, the second probe producing a second temperature indication and the third probe producing a third temperature indication, and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than an uncorrected readings produced by both the first and second probes. Thereafter, deriving a corrected temperature reading for the third probe by adjusting the temperature correction calculated for the first probe according to the measured emissivity sensitivity associated with the environment of the third probe to provide a corrected temperature reading that is a more accurate indicator of an actual temperature of the substrate in the environment of the third probe. An apparatus for carrying out the method is also disclosed.
Assignee:
APPLIED MATERIALS INC
Filing Date:
01 May 1996
Grant Date:
26 May 1998
Patent Classes:
Current U.S. Class:
374128000, 374002000, 374110000, 374126000
Current International Class:
G01J0050000000, G01K0150000000
9.
Peuse, Bruce W.; Miner, Gary E.; Yam, Mark, "METHOD AND APPARATUS FOR MEASURING SUBSTRATE TEMPERATURES"
Inventors:
Peuse, Bruce W.; Miner, Gary E.; Yam, Mark
Abstract:
A method of correcting a temperature probe reading in a thermal processing chamber for heating a substrate, including the steps of heating the substrate to a process temperature; using a first probe and a second prob to measure the temperature of the substrate, the first probe having a first effective reflectivity and the second chamber having a second effective reflectivity, the first probe producing a first temperature indication and the second probe producing a second temperature indication and wherein the first and second effective reflectivities are different; and from the first and second temperature indications, deriving a corrected temperature reading for the first probe, wherein the corrected temperature reading is a more accurate indicator of an actual temperature of the substrate than are uncorrected readings produced by both the first and second probes.
Assignee:
APPLIED MATERIALS INC
Filing Date:
19 December 1994
Grant Date:
26 August 1997
Patent Classes:
Current U.S. Class:
374128000, 374126000
Current International Class:
G01J0050600000
10.
Ozturk, Mehmet C.; Sanganeria, Mahesh K., "METHOD FOR FORMING A LAYER OF UNIFORM THICKNESS ON A SEMICONDUCTOR WAFER DURING RAPID THERMAL PROCESSING"
Inventors:
Ozturk, Mehmet C.; Sanganeria, Mahesh K.
Abstract:
A ring is provided on a monocrystalline silicon wafer at one face thereof and adjacent the edge thereof. The ring increases the optical absorptivity of the wafer adjacent the ring compared to the optical absorptivity of the wafer distant from the ring. The ring therefore at least partially compensates for edge cooling of the wafer during rapid thermal processing thereof. Uniform thickness layers can therefore be deposited on a wafer in a rapid thermal processing system. When depositing polycrystalline silicon on an oxide covered layer, the ring may be formed as a circular trench in the oxide layer adjacent the wafer edge.
Assignee:
NORTH CAROLINA STATE UNIVERSITY
Filing Date:
08 September 1993
Grant Date:
08 August 1995
Patent Classes:
Current U.S. Class:
438488000, 257E21101, 438585000
Current International Class:
H01L0210000000
11.
Hauser, John R.; Sorrell, Furman Y.; Wortman, Jimmie J., "THREE ZONE RAPID THERMAL PROCESSING SYSTEM UTILIZING WAFER EDGE HEATING MEANS"
Inventors:
Hauser, John R.; Sorrell, Furman Y.; Wortman, Jimmie J.
Abstract:
A three zone rapid thermal processing system includes three arrays of radiant heating lamps for heating a semiconductor wafer. The arrays are positioned along the axis of the wafer such that one array is adjacent one face of the wafer, the second array is adjacent the second face of the wafer and the third array is adjacent the edge of the wafer. A wafer holder holds the wafer face transverse to the common axis of the radiant heating lamps. Reflectors at each array reflect radiant heat onto the wafer. The arrays are independently connected to power sources and a controller to provide efficient coupling of the heat sources and a uniform temperature distribution across a wafer.
Assignee:
NORTH CAROLINA STATE UNIVERSITY
Filing Date:
29 December 1992
Grant Date:
23 May 1995
Patent Classes:
Current U.S. Class:
392416000, 118724000, 219390000, 392411000, 427557000
Current International Class:
F26B0190000000, A21B0020000000, H01L0210000000
12.
Thakur, Randhir P.; Sandhu, Gurtej S.; Martin, Annette L., "SYSTEM FOR REPEATABLE TEMPERATURE MEASUREMENT USING SURFACE REFLECTIVITY"
Inventors:
Thakur, Randhir P.; Sandhu, Gurtej S.; Martin, Annette L.
Abstract:
A system is disclosed for externally measuring the temperature of a substrate having a reflective surface within a chamber. The system comprises a first light source having sufficient intensity for bombarding the reflective surface with photons, thereby heating the surface. The first light source has an output level and a wavelength substantially in the absorption band of silicon. The system also comprises means for exposing the substrate to a gas in order to form a layer superjacent the reflective surface. A sensor, preferably a photo detector, for sensing changes in the reflectivity of the surface is included. In one embodiment of the present invention, the sensor comprises a second light source and a sensor, for sensing the reflectivity of the surface caused by the reflecting photons. Furthermore, the system comprises control circuitry for controlling the first light source in response to the sensor; the control circuitry being coupled to the sensor by a feedback loop.
Assignee:
MICRON SEMICONDUCTOR INC
Filing Date:
30 November 1992
Grant Date:
15 November 1994
Patent Classes:
Current U.S. Class:
374161000, 374121000, 374E11001
Current International Class:
G01K0110000000
13.
Thakur, Randhir P.; Sandhu, Gurtej S.; Martin, Annette L., "METHOD FOR REPEATABLE TEMPERATURE MEASUREMENT USING SURFACE REFLECTIVITY"
Inventors:
Thakur, Randhir P.; Sandhu, Gurtej S.; Martin, Annette L.
Abstract:
A method is disclosed for continuously measuring the temperature of a semiconductor substrate in a chamber is disclosed. The first step of the method involves providing a substantially clean semiconductor substrate having a layer a reflective surface thereon into a chamber. A film is formed superjacent the surface by introducing a gas comprising at least one of N.sub.2, NH.sub.3, O.sub.2, N.sub.2 O, Ar, Ar??H.sub.2, H.sub.2, GeH.sub.4, or any fluorine based gas and photon energy in situ. The photon energy, having a wavelength substantially in the absorption band of silicon, generates a temperature substantially within the range of 500.degree. C. to 1250.degree. C. Subsequently, the reflectivity of the surface is measured prior to introducing the gas, and continuously, while forming the film until the film is substantially formed. The substrate is exposed to photon energy having a power level responsive to the measured reflectivities of the film.
Assignee:
MICRON SEMICONDUCTOR INC
Filing Date:
30 November 1992
Grant Date:
27 September 1994
Patent Classes:
Current U.S. Class:
374161000, 356043000, 374129000, 374E11020
Current International Class:
G01J0055400000
14.
Wortman, Jimmie J.; Sorrell, Furman Y.; Hauser, John R.; Fordham, Mark J., "CONICAL RAPID THERMAL PROCESSING APPARATUS"
Inventors:
Wortman, Jimmie J.; Sorrell, Furman Y.; Hauser, John R.; Fordham, Mark J.
Abstract:
A conical rapid thermal processing system includes a conical thermal radiation reflector and a plurality of elongated radiant heating sources within the conical thermal radiation reflector. The elongated radiant heating sources pass through an imaginary conical surface within the conical thermal radiation reflector. A wafer holder within the imaginary conical surface holds the wafer face transverse to the common axis of the conical reflector and the conically arranged radiant heating lamps. The conical thermal radiation reflector and conically arranged lamps provide uniform radiant heating across the face of a wafer without significantly degrading coupling efficiency.
Assignee:
NORTH CAROLINA STATE UNIVERSITY
Filing Date:
29 September 1992
Grant Date:
12 October 1993
Patent Classes:
Current U.S. Class:
392416000, 118724000, 219390000, 219405000, 392418000, 432120000
Current International Class:
A21B0020000000, F26B0033000000, F27B0090400000, F27B0090600000
