I. Introduction
SiC MOSFETs are gradually gaining traction in the power semiconductor market, especially for automotive-grade applications at higher temperatures ranging from 85°C to 120°C, compared to Silicon transistors. Despite the advantages of SiC MOSFETs, the high junction temperature (Tj) challenges the reverse recovery performance of their body diodes. As a PIN junction, the body diode usually presents a temperature-dependent fast charging and slow falling reverse recovery behavior during the transition switching from forward bias to reverse bias. The body diode’s reverse recovery time (Trr) can be longer than 50 ns, and the magnitude of the reverse recovery current (Irr) can be equal to or larger than the diode’s forward freewheeling current. This fast charging behavior leads to significant current and voltage spikes on the MOSFETs, resulting in heavy electromagnetic interference [1]. The slow falling behavior leads to high reverse recovery energy losses (Err) on the MOSFETs, which may constitute 14% of the total switching energy losses [2].