Abstract:
Recently, the bandwidths of semiconductor lasers, detectors, and optical transmission systems have been dramatically increased. The considerations used to achieve a recor...Show MoreMetadata
Abstract:
Recently, the bandwidths of semiconductor lasers, detectors, and optical transmission systems have been dramatically increased. The considerations used to achieve a record 26.5 GHz bandwidth in a 1.3 μm InGaAsP laser at -60°C are described here. The small-signal modulation characteristics of a number of different laser structures are compared. Several large-signal modulation experiments are described with emphasis on the laser response to 8 Gbit/s modulation.
Published in: IEEE Journal of Quantum Electronics ( Volume: 22, Issue: 6, June 1986)
References is not available for this document.
Select All
1.
These five references and [2] list most of the modulation literature in their references: G. Η. Β. Thompson, Physics of Semiconductor Laser Devices, New York: Wiley, 1980, pp. 402-443
2.
T. Ikegami and Y. Suematsu, "Direct modulation of semiconductor junction laser", Electron. Commun. Japan, vol. 51-B, pp. 51-58, 1968.
3.
T. L. Paoli and J. E. Ripper, "Direct modulation of semiconductor lasers", Proc. IEEE, vol. 58, pp. 1457-1465, 1970.
4.
K. Y. Lau and A. Yariv, "High-frequency current modulation of semiconductor injection lasers" in Lightwave Communication Technology, New York:Academic, pp. 69-152, 1985.
5.
Y. Suematsu, "Long-wave-length optical fiber communication", Proc. IEEE, vol. 71, pp. 692-721, 1983.
6.
R. S. Tucker, "High-speed modulation of semiconductor lasers", J. Lightwave Technol., vol. LT-3, Dec. 1985.
7.
J. E. Bowers, "Millimeter wave response in InGaAsP Lasers", Electron. Lett., vol. 21, pp. 1195-1197, 1985.
8.
D. J. Channin, "Effect of gain saturation on injection laser switching", J. Appl. Phys., vol. 50, pp. 3858, 1979.
9.
A. Yariv, Quantum Electronics, New York:Wiley, pp. 167, 1975.
10.
C. B. Su and V. Lanzisera, "Effect of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers", Appl. Phys. Lett., vol. 45, pp. 1302-1304, 1984.
11.
F. Stern, "Calculated spectral dependence of gain in excited GaAs", J. Appl. Phys., vol. 47, pp. 5382-5386, 1976.
12.
T. L. Koch, unpublished.
13.
H. Burkhardt and E. Kuphal, "Three- and-four-layer LPE InGaAs(P) mushroom stripe laser for λ = 1.30 1.54 and 1.66 μm", IEEE J. Quantum Electron., vol. QE-21, pp. 650-657, 1985.
14.
T. L. Koch, L. A. Coldren, T. J. Bridges, E. G. Burkhardt, P. J. Corvini and Β. I. Miller, "Low-threshold high speed 1.55 μm vapor phase transported buried heterostructure lasers (VPTBH)", Electron Lett., vol. 20, pp. 856-857, 1984.
15.
C. B. Su, V. Lanzisera, W. Powazinik, E. Meland, R. Olshansky and R. B. Lauer, "12.5-GHz direct modulation bandwidth of vapor phase regrown 1.3-μm InGaAsP buried heterostructure lasers", Appl. Phys. Lett., vol. 46, pp. 344-346, 1985.
16.
Z. L. Liau and J. N. Walpole, "A novel technique for GaInAsP/InP buried heterostructure laser fabrication", Appl. Phys. Lett., vol. 40, pp. 568-570, 1982.
17.
J. E. Bowers, B. R. Hemenway, Α. H. Gnauck, T. J. Bridges, E. G. Burkhardt, D. P. Wilt, et al., "High frequency constricted mesa lasers", Appl. Phys. Lett., vol. 47, pp. 78-80, 1985.
18.
J. E. Bowers, B. R. Hemenway, D. P. Wilt, T. J. Bridges and E. G. Burkhardt, "265-GHz-bandwidth InGaAsP constricted-mesa lasers with tight optical confinement", Electron Lett., vol. 21, pp. 1090-1091, 1985.
19.
J. E. Bowers, L. A. Coldren, B. R. Hemenway, B. I. Miller and R. J. Martin, "155 μm multisection ridge lasers", Electron Lett., vol. 19, pp. 523-525, 1983.
20.
L. A. Coldren and J. A. Rentschler, " Directional reactive-ion etching of InP with Cl 2 containing gases ", J. Vacuum Sci. Technol., vol. 19, pp. 225-230, 1981.
21.
B. R. Hemenway, J. E. Bowers and Β. I. Miller, "Anisotropic undercutting in (100) indium phosphide", Electron. Lett., vol. 19, pp. 1049-1051, 1983.
22.
T. J. Bridges and E. G. Burkhardt, unpublished.
23.
G. H. Olsen, "Vapor-phase epitaxy of GaInAsP" in GaInAsP Alloy Semiconductors, New York:Wiley, pp. 18, 1982.
24.
The characterization system was supplied by W. H. Ballman, A. G. Naylor, and R. Bailey of AT Technology Systems, Reading, PA.
25.
J. E. Bowers, C. A. Burrus and R. J. McCoy, "InGaAs PIN photodetector with modulation response to millimeter wavelengths", Electron. Lett., vol. 21, pp. 812-814, 1985.
26.
J. E. Bowers, unpublished.
27.
A. H. Gnauck, J. E. Bowers and J. C. Campbell, "8 Gb/s transmission over 30 km of optical fiber", European Conf. Opt. Commun., 1985.
28.
J. C. Campbell, A. G. Dentai, W. S. Holden and B. L. Kasper, Electron. Lett., vol. 19, 1983.
29.
C. Lin and J. E. Bowers, "High speed large signal digital modulation of a 1.3 μm InGaAsP constricted mesa laser at a simulated bit rate of 16 Gb/s", Electron. Lett., vol. 21, pp. 906-908, 1985.
30.
Hewlett-Packard waveguide designations.
