Abstract:
Recent progress on semiconductor lasers having a very high direct modulation bandwidth of beyond 10 GHz will be described. Issues related to application of these lasers i...Show MoreMetadata
Abstract:
Recent progress on semiconductor lasers having a very high direct modulation bandwidth of beyond 10 GHz will be described. Issues related to application of these lasers in actual systems will be addressed. Possibilities of further extending the bandwidth of semiconductor lasers will be examined.
Published in: IEEE Journal of Quantum Electronics ( Volume: 21, Issue: 2, February 1985)
References is not available for this document.
Select All
1.
H. Statz and G. deMars, "Transients and oscillation pulses in masers" in Quantum Electronics, New York:Columbia Univ. Press, pp. 530-537, 1960.
2.
L. Figueroa, C. Slayman and H. W. Yen, "High frequency characteristics of GaAlAs injection lasers", IEEE J. Quantum Electron., vol. QE-18, pp. 1718-1727, 1982.
3.
H. Kressel and J. K. Butler, Semiconductor Lasers and Hetero-junction LEDs, New York:Academic, 1979.
4.
T. Ikegami and Y. Suematsu, "Direct modulation of semiconductor junction lasers", Electron. Commun. Japan, vol. B51, pp. 51-58, 1968.
5.
T. P. Paoli and J. E. Ripper, "Direct modulation of semiconductor lasers", Proc. IEEE, vol. 58, pp. 1457-1465, 1970.
6.
S. I. Gonda and S. Mukai, "Degradation and intensity fluctuation in CW GaAlAs double heterostructure lasers", IEEE J. Quantum Electron., vol. QE-11, pp. 545-550, 1975.
7.
J. Angerstein and D. Siemsen, "Modulation characteristics of injection lasers including spontaneous emission—2. Experiments", Arch. Elek. Ubertragung., vol. 30, pp. 477-480, 1976.
8.
T. P. Paoli, "Magnitude of the intrinsic resonant frequency in a semiconductor laser", Appl. Phys. Lett., vol. 39, pp. 522-524, 1981.
9.
F. Stern, "Calculated spectral dependence of gain in excited GaAs", J. Appl. Phys., vol. 47, pp. 5382-5386, 1976.
10.
K. W. Wakao, N. Takagi, K. Shima, K. Hanamitsu, K. Hori and M. Takusagawa, "Catastrophic degradation level of visible and infrared GaAlAs lasers", Appl. Phys. Lett., vol. 41, pp. 1113-1115, 1982.
11.
A "crank" TJS laser can operate reliably at a pump current density equivalent to almost 10 kA/cm2 without suffering excessive heating or undue degradation. Data from Mitsubishi Corp.
12.
N. Bar-Chaim, J. Katz, I. Ury and A. Yariv, "Buried heterostructure AlGaAs laser on semi-insulating substrate", Electron. Lett., vol. 17, pp. 108-109, 1981.
13.
I. Ury, K. Y. Lau, N. Bar-Chaim and A. Yariv, "Very high frequency GaAlAs laser-field effect transistor monolithic integrated circuit", Appl. Phys. Lett., vol. 41, pp. 126-128, 1982.
14.
N. Bar-Chaim, K. Y. Lau, 1. Ury and A. Yariv, "High speed GaAlAs/GaAs pin photodiode on a semi-insulating substrate", Appl. Phys. Lett., vol. 43, pp. 261-262, 1983.
15.
H. C. Casey and M. B. Panish, Heterostructure Lasers, New York:Academic, pp. 174, 1978.
16.
H. Kressel and J. K. Butler, Semiconductor lasers and Heterojunction LEDs, New York:Academic, pp. 230, 1975.
17.
S. Takahashi, T. Kobayashi, H. Saito and Y. Furukawa, "GaAsAlGaAs DH lasers with buried facets", Japan J. Appl. Phys., vol. 17, pp. 865-870, 1978.
18.
H. Blauvelt, S Margalit and A. Yariv, "Large optical cavity AlGaAs buried heterostructure window laser", Appl. Phys. Lett., vol. 40, pp. 1029-1031, 1982.
19.
K. Y. Lau, N. Bar-Chaim, I. Ury and A. Yariv, "An 11 GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperature", Appl. Phys. Lett., vol. 45, Aug. 1984.
20.
K. Y. Lau and A. Yariv, "Effect of superluminescence on the modulation response of semiconductor lasers", Appl. Phys. Lett., vol. 40, pp. 452-454, 1982.
21.
K. Y. Lau, N. Bar-Chaim, I. Ury, C. Harder and A. Yariv, "Super-luminescent damping of relaxation resonance in the modulation response of GaAs lasers", Appl. Phys. Lett., vol. 43, pp. 329-331, 1983.
22.
J. Helszajn, Passive and Active Microwave Circuits, New York:Wiley, 1978.
23.
Appl. Note on s-parameters.
24.
J. Katz, S. Margalit, C. Harder, D. P. Wilt and A. Yariv, "The intrinsic equivalent circuit of a laser diode", IEEE J. Quantum Electron., vol. QE-17, pp. 4-7, 1981.
25.
J. D. Jackson, Classical Electrodynamics, New York:Wiley, 1975.
26.
W. Harth and D. Siemsen, "Modulation characteristics of injection lasers including spontaneous emission—1. Theory", Arch. Elek. Ubertragung., vol. 30, pp. 343-348, 1976.
27.
K. Aiki, M. Nakamura, T. Kuroda, K. Umeda, R. Ito, N. Chinone, et al., "Transverse mode stabilized AlGaAs injection laser with channeled substrate planar structure", IEEE J. Quantum Electron., vol. QE-14, pp. 89-94, 1978.
28.
K. Furuya, Y. Suematsu and T. Hong, "Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection lasers", Appl. Opt., vol. 17, pp. 1949-1952, 1978.
29.
M. Maeda, K. Nagano, M. Tanaka and K. Chiba, "Buried hetero-structure laser packaging for wideband optical transmission system", IEEE Trans. Commun., vol. COM-26, pp. 1076-1081, 1978.
30.
L. Figueroa, C. Slayman and H. W. Yen, "High frequency characteristics of GaAlAs injection lasers", IEEE J. Quantum Electron., vol. QE-18, pp. 1718-1727, 1982.