I. Introduction
Complementary metal-oxide semiconductor (CMOS) technology is commonly used for the fabrication of image sensors [1], [2]. An important characteristic of the CMOS technology is that it allows for the fabrication of transistors inside the pixel matrix. Conventional image sensors use this characteristic to improve signal-to-noise ratio by amplifying the photo-generated signal. In contrast to conventional CMOS video sensors, which are frame-based, the event-based sensors are asynchronous, and they have been acquiring increasing popularity over the last years [3]. They are now investigated or commercialized by a number of companies [4], and have been employed in several different event-based vision applications, ranging from robotics to astronomy [5]. In the asynchronous time-based image sensor (ATIS) [6], transistors are included inside the pixel matrix to measure light variations, and to perform event-based capture by measuring the photodiode capacitance discharge time.