I. Introduction
As the trend toward electrification accelerates, power converters used in applications such as electric shipboards, electric vehicles (EVs), and aircraft must deliver high performance while becoming more compact [1]-[3]. Power transistors are crucial in determining both the size and efficiency of a power converter. Over the past decade, wide bandgap (WBG) power transistors, e.g., gallium nitride (GaN) and silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET), have seen widespread adoption due to their advantages, including faster switching speeds, higher voltage-blocking capabilities, and the ability to operate at higher temperatures compared to their silicon (Si) counterparts. These benefits result in enhanced efficiency and performance, as well as a reduction in the size and weight of passive components and cooling systems within the power converters [4], [5].