Abstract:
The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic ...Show MoreMetadata
Abstract:
The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced mixer. The single-balanced mixer has been designed using the HEMT gate Schottky diodes inherent to the process. Measured results of the complete downconverter show conversion gain of 5.5 dB and a double-sideband noise figure of 6.7 dB at 94 GHz. Also presented is the downconverter performance characterized over the -35 degrees C to +65 degrees C temperature range. The downconverter design was a first pass success and has a high circuit yield.<>
Published in: IEEE Transactions on Microwave Theory and Techniques ( Volume: 39, Issue: 12, December 1991)
DOI: 10.1109/22.106535
