Abstract:
An experimental technique using pulse in-plane fields has been used to study Vertical Bloch Line (VBL) dynamics. Typically a 4 Oe, 1 μs pulse was applied parallel to a co...Show MoreMetadata
Abstract:
An experimental technique using pulse in-plane fields has been used to study Vertical Bloch Line (VBL) dynamics. Typically a 4 Oe, 1 μs pulse was applied parallel to a confined stripe domain and the presence of VBL were detected by the orthogonal wall motion caused by gyrotropic coupling. This method was used to study Bloch line mobility, coercivity, saturation velocity and the process of punch-through as proposed in a VBL memory device.
Published in: IEEE Transactions on Magnetics ( Volume: 23, Issue: 5, September 1987)
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1.
S Konishi, "A New Ultra High Density Solid State Memory: Bloch Line Memory", IEEE Trans on Magn, vol. MAG—19, no. 5, pp. 1838-1840, 1983.
2.
T Suzuki, H Asada, Κ Matsuyama, E Fujita, Y Saegusa, Κ Morikawa, et al., "Chip Organisation of Bloch Line Memory", IEEE Trans on Magn, vol. MAG-22, no. 5, pp. 784-789, 1986.
3.
Y Hidaka, "A Bloch Line Pair Generator Using the Flank Wall Near the Stripe Domain Head for the Bloch Line Memory", Jap Journ of Appl Phys, vol. 25, no. 3, pp. 1228-1231, 1986.
4.
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5.
Y Hidaka, Κ Matsuyama and S Konishi, "Experimental Confirmation of Fundamental Functions for a Novel Bloch Line Memory", IEEE Trans on Magn, vol. MAG-19, no. 5, pp. 1841-1843, 1983.
6.
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