I. Introduction
The widespread application of power electronics and the expected lower energy cost have raised concerns about reliability, particularly regarding the key component, the insulated-gate bipolar transistor (IGBT) module due to its high failure rate [1]. In reliability analysis, the degradation characterization plays a crucial role as it not only enables effective identification of failure mechanisms but also influences subsequent prognostic analysis [2], [3]. Packaging reliability acts as a bottleneck that impacts the performance of the device [4]. Over the past two decades, a variety of studies have focused on this topic, employing the power cycling test as an effective tool [5]. Therefore, the degradation characterization in power cycling tests holds important significance.