I. Introduction
The advances in wide bandgap power switching devices such as SiC and GaN have led to high performance at the PWM converter due to the higher switching frequency and lower losses. While these high switching operations can enhance the performance of PWM converter-fed high impedance load, the sharp voltage rise can degrade the insulation of the load because of the increased leakage current. In addition, connection of a long cable between converter and high impedance load can results in the undamped high frequency voltage surges at the terminal of the load, which can stress the load insulation [1]. Therefore, to minimize the sharp voltage rise at the load terminal, a dv/dt filter is used at the converter output to increase the rise time or a shunt RC filter can be located at the load terminal to reduce a load impedance at high frequency [2] [3]. A relatively short length of cable connected between SiC converter and high impedance load is equivalent to a transmission line. In this paper, transmission line model theory and voltage reflection theory are used to explain a voltage surge phenomenon at a cable. In addition, voltage surge generation in terms of the ratio of rise time to the propagation time is analyzed and verified by simulation and experiment.