Contents I. Introduction
Magnetic tunneling junctions (MTJs), based on the spin polarized tunneling effect, have received a great deal of attention both in the academic community and electronics industry since it was demonstrated that MTJ can serve as a high-density memory device with nonvolatility and high speed [1], [2]. Although much progress has been made incorporating the magnetic device into conventional semiconductor processing technology, the postannealed behavior of MTJ remains problematic because the magnetic materials need to withstand standard backend process temperatures for CMOS manufacturing [2].
