Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated With Si Ions

The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17-MeV Si ions are investigated via current–voltage, low-frequency (LF) noise, and deep level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base–collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent LF 1/f noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Our results show that DLTS and 1/f noise measurements can provide complementary information about defects in linear bipolar devices.

I. Introduction

Bipolar junction transistors (BJTs) are widely used in many electronic systems due to their high driving capability, linearity, and speed advantages [1], [2]. The reliability of BJTs in space systems and their radiation responses have been extensively studied since the 1950s [3], [4], [5]. Heavy ion-induced degradation has been studied via deep level transient spectroscopy (DLTS). Several defects that are important to the BJT radiation response have been identified [6], [7], [8], [9], [10], [11]. In addition, Li et al. [12], [13] have employed DLTS measurements to investigate synergistic effects of ionization and displacement defects in n-p-n BJTs irradiated by heavy ions.