I. Introduction
The first monolithic SiC four-quadrant (4Q) switch has been fabricated with two 1.2 kV 4H-SiC JBSFETs connected in a common-drain configuration [1]. An isolated AC/DC converter for grid-tied photovoltaic (PV) three-phase commercial application shown as Fig 1, is proposed to demonstrate the feasibility and to showcase the system-level benefits of using monolithic BiDFET [2]. The proposed converter has a full-bridge inverter using 2-quadrant switches on the PV-side, whereas the matrix converter on the grid-side operates by switching any two-phases during a switching period. Owing to the new switching sequence enabled by the 4Q BiDFET, a multi-level staircase voltage is imposed on the isolation transformer, in which the excitation for such converter is different from a traditional DAB converter [3]. The converter can be operated as an inverter or as a rectifier depending on the application. In this work, the inverter mode is used to interface the 800 Vdc PV with the 480 Vrms power grid.