Accurate Analytical eGaN® HEMT Parameterizable Matlab® Model Based on Datasheet from Manufacturer and Its Applications in Optimal Design

This paper presents an accurate and parameterizable analytical modeling for Gallium Nitride high electron mobility transistor (GaN HEMT) implemented in Matlab. GaN HEMTs drive the design of power converters to higher switching frequencies and efficiencies. Reaching highest efficiency, each loss source becomes acknowledgeable and must be accurately evaluated. In GaN HEMT based design, gate resistance, deadtime, package and PCB parasitics, reverse voltage drop, nonlinearity of internal capacitances and thermal evolution of transfer characteristic impact dramatically the losses. The proposed model is based on temporal resolution of an equivalent electrical circuit for both GaN HEMT internal waveforms and converter waveforms. The model is parameterizable in order to quickly and accurately evaluate the impact of each design parameter on losses. The GaN HEMT physical parameters are fitted from datasheet. The model is as accurate as the original LTspice model and can be integrated in an automated design system for power electronic converters.