On-wafer characterisation of resonant-tunnelling diodes up to 1.1 THz

This paper presents on-wafer S-parameter characterisation of resonant-tunnelling diodes between 0.5 THz and 1.1 THz. Diodes with a peak current density of 532 kA/cm$^{2}$ and a clear negative differential region have been fabricated. An on-chip Multi-Thru-Reflect-Line calibration kit was developed and utilised to achieve accurate S-parameter measurements up to 1.1 THz.