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Terahertz On-Chip Aperture Antenna With Through Substrate Vias for Enhanced Gain and Chip-Size Insensitivity in InP Technology | IEEE Journals & Magazine | IEEE Xplore

Terahertz On-Chip Aperture Antenna With Through Substrate Vias for Enhanced Gain and Chip-Size Insensitivity in InP Technology


Abstract:

In this article, an on-chip aperture antenna in indium phosphide (InP) technology is proposed for terahertz transceivers. Terahertz on-chip antennas are often directly co...Show More

Abstract:

In this article, an on-chip aperture antenna in indium phosphide (InP) technology is proposed for terahertz transceivers. Terahertz on-chip antennas are often directly connected to the amplifier, and the bulky substrate of active circuits affects the impedance and radiation characteristics of the antenna. In order to obtain robust antenna performances against the uncertain chip size of the active circuits and simultaneously enhance the gain and radiation efficiency, through substrate vias (TSVs) are utilized to form the quasi-substrate integrated waveguide (SIW) cavity. Furthermore, a dual-mode aperture antenna with the quasi-SIW cavity is proposed, and the high-order mode of the substrate integrated cavity is introduced in proximity to the aperture mode to broaden the impedance bandwidth. The nonbroadside radiation pattern of the even-TM120 mode is successfully reshaped by the radiating apertures. Then, a custom-designed ground package is analyzed to fix the chip and further improve the broadside gain. Finally, the proposed antenna is fabricated and measured. Benefiting from the techniques proposed above, a competitive gain of \sim 8.0 dBi is obtained.
Published in: IEEE Transactions on Antennas and Propagation ( Volume: 71, Issue: 9, September 2023)
Page(s): 7184 - 7195
Date of Publication: 11 July 2023

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I. Introduction

Terahertz RF front ends have achieved much attention due to their potential applications in communications and radars [1], [2], especially when the IEEE 802.15.3d standard was proposed [3]. However, when the operating frequency rises above 300 GHz, the highly integrated, low-cost, and easily large-scale integration silicon-based process is limited by their low cutoff frequency (), and the output power of the RF front-end is limited. One effective solution is to integrate amplifiers based on III–V process, i.e., indium phosphide (InP). In addition, the antenna above 300 GHz is a critical component to radiate the power into the free space.

References

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