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Self aligned BM for VLSI using a new diffusion technique for shallow base formation | IEEE Conference Publication | IEEE Xplore

Self aligned BM for VLSI using a new diffusion technique for shallow base formation


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Date of Conference: 21-23 June 1993
Date Added to IEEE Xplore: 06 August 2002
Conference Location: Santa Barbara, CA, USA

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F. S. Johnson, D. S. Miles, D. T. Grider and J. J. Wortman, Journal of Electronic Materials, vol. 21, no. 6, 1992.

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